µ PA1950
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0 V
100
Ciss
Coss
Crss
10
−0.1
−1
−10
VDS - Drain to Source Voltage - V
−100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10
1
0.1
1000
SWITCHING CHARACTERISTICS
100
10
td(off)
tf
tr
td(on)
VDD = −6.0 V
VGS(on) = −4.0 V
1 RG = 10 Ω
−0.1
−1.0
−10
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−5
ID = −2.5 A
−4
VDD = 10 V
6V
−3
−2
−1
0.01
-0.4
-0.6
-0.8
-1.0
-1.2
VF(S-D) - Source to Drain Voltage - V
0
0
0.4
0.8
1.2
1.6
2.0
QG - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000 Single Pulse
Mounted on FR-4 Board of
50 cm2 x 1.1 mm
PD (FET1) : PD (FET2) = 1:0
100
PD (FET1) : PD (FET2) = 1:1
10
1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet G15620EJ2V0DS
5