M5M29F25611VP 查看數據表（PDF） - MITSUBISHI ELECTRIC

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M5M29F25611VP

MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY

MITSUBISHI ELECTRIC  

MITSUBISHI LSIs

M5M29F25611VP

MORE THAN 16,057 SECTORS (271,299,072 BITS)

CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY

Erase and Programming Operations

DC Characteristics (Vcc = 3.0V to 3.6V , Ta = 0 to +70°C )

Symbol

ILI

ILO

ISB1

ISB2

ISB3

ICC3

ICC4

VIL

VIH

VOL

VOH

Parameter

Input leakage current

Output leakage current

Standby Vcc current

Deep Standby Vcc current

Operating Vcc current

Input low voltage

Input high voltage

Output low voltage

Output high voltage

Test conditions

GND ≤ VIN ≤ VCC

GND ≤ VOUT ≤ VCC

= VIH

= VCC ± 0.2V

= VCC ± 0.2V

= GND ± 0.2V

In programming

In erase

IOL = 2mA

IOH = -2mA

Min

-

-

-

-

-

-

-

-0.3 1)

2.0

-

2.4

Limits

Typ

-

-

0.3

30

1

20

20

-

-

-

-

Unit

Max

2

µA

2

µA

1

mA

50

µA

10

µA

40

mA

40

mA

0.8

V

VCC + 0.3 2) V

0.4

V

-

V

Notes : 1. VILmin = -0.6V for pulse width ≤ 20ns.

2. If VIH is over the specified maximum value, the Erase and Programming operations are not guaranteed.

18

Rev.2.3.1 2001.2.2

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