MOC8100TM 查看數據表（PDF） - Fairchild Semiconductor
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MOC8100TM Datasheet PDF : 11 Pages
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Electrical Characteristics (Continued) (TA = 25°C unless otherwise specified.)
Transfer Characteristics
Symbol
Parameter
Test Conditions
DC CHARACTERISTICS
CTRCE Current Transfer Ratio,
Collector to Emitter
IC(ON) On-State Collector Current
(Phototransistor Operation)
IF = 10mA, VCE = 10V
IF = 1mA, VCE = 5V
IF = 1mA, VCE = 5V,
TA = 0°C to +70°C
IF = 16mA, VCE = 0.4V
On-State Collector Current IF = 16mA, VCB = 0.4V
(Photodiode Operation)
VCE (SAT) Collector-Emitter Saturation
Voltage
AC CHARACTERISTICS
IC = 500µA, IF = 10mA
IC = 2mA, IF = 16mA
IC = 100µA, IF = 1mA
TON Turn-On Time
IC = 2mA, VCC = 10V,
RL = 100Ω (Fig. 11)
TOFF Turn-Off Time
tr
Rise Time
tf
Fall Time
tr
Rise Time
IC(ON) = 2mA, VCC = 10V,
(Phototransistor Operation) RL = 100Ω (Fig. 11)
tf
Fall Time
(Phototransistor Operation)
Device Min Typ* Max Unit
TIL117M
50
MOC8100M 50
30
TIL111M
2
7
TIL117M
TIL111M
MOC8100M
%
%
mA
µA
0.4 V
0.4
0.5
MOC8100M
TIL117M
MOC8100M
TIL117M
MOC8100M
TIL117M
TIL111M
20 µs
10
20 µs
10
2
µs
2
10 µs
Isolation Characteristics
Symbol
Characteristic
VISO
RISO
CISO
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
*All Typical values at TA = 25°C
Test Conditions
f = 60Hz, t = 1 sec.
VI-O = 500 VDC
VI-O = 0, f = 1MHz
Min.
7500
1011
Typ.*
0.2
Max.
Units
VAC(rms)
Ω
pF
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
4
www.fairchildsemi.com
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