Philips Semiconductors
Versatile telephone transmission circuit
with dialler interface
Product specification
TEA1066T
SYMBOL
PARAMETER
CONDITIONS
Microphone inputs MICL+ and MICL−; MICH+ and MICH−
Zi
input impedance
MICL+ (pin 9); MICL− (pin 7)
MICH+ (pin 10); MICH− (pin 8)
CMRR
common mode rejection ratio
Gv
voltage gain
MICL+/MICL− to LN
Iline = 15 mA; R7 = 68 Ω
∆Gvf
MICH+/MICH− to LN
gain variation with frequency at
f = 300 Hz and 3400 Hz
with respect to 800 Hz
∆GvT
gain variation with temperature at
Tamb = −25 °C and +75 °C
Iline = 50 mA; with respect to
800 Hz
Dual-tone multi-frequency input DTMF (pin 15)
Zi
Gv
∆Gvf
input impedance
voltage gain from DTMF to LN
gain variation with frequency at
f = 300 Hz and 3400 Hz
Iline = 15 mA; R7= 68 kΩ
with respect to 800 Hz
∆GvT
gain variation with temperature at
Tamb = −25 °C and +75 °C
Iline = 50 mA; with respect
to 25 °C
Gain adjustment connections GAS1 and GAS2 (pins 2 and 3)
∆Gv
gain variation with R7, transmitting
amplifier
Transmitting amplifier output LN (pin 1)
VLN(rms)
output voltage (RMS value)
Vno(rms)
noise output voltage (RMS value)
Iline = 15 mA; THD = 2%
Iline = 15 mA; THD = 10%
Iline = 15 mA; R7 = 68 kΩ;
microphone inputs open;
psophometrically weighted
(P53 curve)
Receiving amplifier input IR (pin 13)
Zi
input impedance
Receiving amplifier outputs QR+ and QR− (pins 5 and 4)
Zo
Gv
∆Gvf
output impedance
single-ended
voltage gain from IR to QR+ or QR− Iline = 15 mA; R4 = 100 kΩ
single-ended; RL = 300 Ω
differential; RL = 600 Ω
gain variation with frequency at
f = 300 Hz and 3400 Hz
with respect to 800 Hz
∆GvT
gain variation with temperature at
Tamb = −25 °C and +75 °C
Iline = 50 mA; with respect to
25 °C
MIN. TYP. MAX. UNIT
3.3 4.1 4.9 kΩ
16.5 20.4 24.5 kΩ
−
82 −
dB
51 52 53 dB
37 38 39 dB
−0.5 ±0.2 +0.5 dB
−
±0.2 −
dB
16.8 20.7 24.6 kΩ
24.5 25.5 26.5 dB
−0.5 ±0.2 +0.5 dB
−
±0.2 −
dB
−8 −
+8 dB
1.9 2.3 −
−
2.6 −
−
−70 −
V
V
dBmp
17 21 25 kΩ
−
4
−
Ω
24 25 26 dB
30 31 32 dB
−0.5 ±0.2 +0.5 dB
−
±0.2 −
dB
1996 Apr 04
10