T810H-6G 查看數據表（PDF） - STMicroelectronics
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T810H-6G Datasheet PDF : 10 Pages
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Characteristics
T810H
Figure 3.
On-state rms current versus
ambient temperature (free air
convection, full cycle)
IT(RMS)(A)
3.0
2.5
2.0
1.5
1.0
0.5
Ta(°C)
0.0
0
25
50
75
100
125
150
Figure 4. Relative variation of thermal
impedance, versus pulse duration
K=[Zth/Rth]
1.E+00
1.E-01
Zth(j-c)
Zth(j-a)
1.E-02
1.E-03
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00 1.E+01 1.E+02 1.E+03
Figure 5.
Relative variation of gate trigger Figure 6.
current and voltage versus junction
temperature (typical values)
Relative variation of holding and
latching current versus junction
temperature (typical values)
IGT, VGT[Tj] / IGT, VGT[Tj=25 °C]
2.5
IGT Q3
2.0
IGT Q1- Q2
IH, IL [Tj] / IH, IL [Tj=25 °C]
2.0
1.5
IH
1.5
1.0 VGT Q1- Q2 -Q3
IL
1.0
0.5
Tj(°C)
0.0
-50
-25
0
25
50
75
100 125 150
0.5
0.0
-50
-25
0
Tj(°C)
25
50
75
100 125 150
Figure 7. Surge peak on-state current
versus number of cycles
ITSM(A)
80
70
60
50
40
30
20
Repetitive
TC=135 °C
10
0
1
Non repetitive
Tj initial=25 °C
Number of cycles
10
100
t=20ms
One cycle
1000
Figure 8.
Non-repetitive surge peak on-state
current and corresponding value
of I2t
ITSM(A), I²t (A²s)
1000
dI/dt limitation: 50 A/µs
100
Tj initial=25 °C
ITSM
10
Sinusoidal pulse width tp < 10 ms
1
0.01
0.10
I²t
1.00
tP(ms)
10.00
4/10
Doc ID 15714 Rev 1
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