STS9NF30L 查看數據表（PDF） - STMicroelectronics

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STS9NF30L

N-CHANNEL 30V - 0.015 Ω - 9A SO-8 LOW GATE CHARGE STripFET™ POWER MOSFET

STMicroelectronics 

STS9NF30L

THERMAL DATA

R th j -a mb

Tj

Tstg

(*)Thermal Resistance Junction-ambient

Maximum Operating Junction T emperature

Storage Temperature

(*) Mounted on FR-4 board (t ≤ 10sec)

50

150

-65 to 150

oC/W

oC

oC

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF

Symbo l

V (BR)D SS

IDSS

IGSS

P ar am et e r

Test Conditions

Dr ain- s our c e

Breakdown Voltage

ID = 250 µA VGS = 0

Zero Gate Voltage

VDS = Max Rat ing

Drain Current (VGS = 0) VDS = Max Rat ing

Tc = 125 oC

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

Min.

30

Typ. Max.

1

10

± 100

Unit

V

µA

µA

nA

ON (∗)

Symbo l

VGS(th)

RDS(on)

ID(o n)

P ar am et e r

Test Conditions

Gat e Threshold Voltage VDS = VGS ID = 250 µA

Static Drain-source On

Resistance

On State Drain Current

VGS = 10 V ID = 4 A

VGS = 4.5 V ID = 4 A

VDS > ID(o n) x RDS(on )ma x

VGS = 10 V

Min.

1

9

Typ. Max.

0.015 0.020

0.018 0.024

Unit

V

Ω

Ω

A

DYNAMIC

Symbo l

gfs (∗)

Ciss

Coss

Crss

P ar am et e r

Forward

Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(o n) x RDS(on )ma x ID = 5.5 A

Min.

Typ.

10

Max.

Unit

S

VDS = 25 V f = 1 MHz VGS = 0 V

750

pF

270

pF

60

pF

2/6

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