STPS80L15CY 查看數據表（PDF） - STMicroelectronics

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STPS80L15CY

LOW DROP OR-ing POWER SCHOTTKY RECTIFIER

STMicroelectronics 

STPS80L15CY

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

IR(mA)

1E+3

1E+2

Tj=100°C

Tj=75°C

1E+1

Tj=25°C

1E+0

VR(V)

1E-1

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

C(nF)

10

5

F=1MHz

Tj=25°C

2

VR(V)

1

1

2

5

10

20

Fig. 9: Forward voltage drop versus forward

current (per diode).

IFM(A)

200

100

Tj=100°C

(typical values)

10

Tj=100°C

(Maximum values)

Tj=25°C

(Maximum values)

VFM(V)

1

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

4/5

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