STD8NM60N(2008_01) 查看數據表（PDF） - STMicroelectronics

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STD8NM60N
(Rev.:2008_01)

N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET

STMicroelectronics 

STD8NM60N - STD8NM60N-1

STF8NM60N - STP8NM60N

N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK

second generation MDmesh™ Power MOSFET

Features

Type

VDSS

(@Tjmax)

RDS(on)

max

ID

STD8NM60N

STD8NM60N-1

STF8NM60N

STP8NM60N

650 V

650 V

650 V

650 V

<0.65 Ω

<0.65 Ω

<0.65 Ω

<0.65 Ω

7A

7A

7 A(1)

7A

1. Limited only by maximum temperature allowed

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

■ Switching applications

Description

This series of devices implements second

generation MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the Company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

3

2

1

TO-220

3

2

1

IPAK

3

1

DPAK

3

2

1

TO-220FP

Figure 1. Internal schematic diagram

Table 1. Device summary

Order code

Marking

STD8NM60N

STD8NM60N-1

STF8NM60N

STP8NM60N

D8NM60N

D8NM60N-1

F8NM60N

P8NM60N

Package

DPAK

IPAK

TO-220FP

TO-220

Packaging

Tape & reel

Tube

Tube

Tube

January 2008

Rev 2

1/17

www.st.com

17

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