STB40N20(2005) 查看數據表（PDF） - STMicroelectronics

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STB40N20
(Rev.:2005)

N-CHANNEL 200V - 0.038Ω - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET™ MOSFET

STMicroelectronics 

STP40N20

STB40N20 - STW40N20

N-CHANNEL 200V - 0.038Ω - 40A TO-220/TO-247/D2PAK

LOW GATE CHARGE STripFET™ MOSFET

Table 1: General Features

TYPE

VDSS RDS(on)

ID

Pw

STP40N20

STW40N20

STB40N20

200 V < 0.045 Ω

200 V < 0.045 Ω

200 V < 0.045 Ω

40 A

40 A

40 A

160 W

160 W

160 W

■ TYPICAL RDS(on) = 0.038 Ω

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING

REPEATIBILITY

■ EXCELLENT FIGURE OF MERIT (RDS*Qg)

■ 100% AVALANCHE TESTED

DESCRIPTION

This MOSFET series realized with STMicroelec-

tronics unique STripFET process has specifically

been designed to minimize input capacitance and

gate charge. It is therefore suitable as primary

switch in advanced high-efficiency isolated DC-DC

converters.

Figure 1: Package

3

2

1

TO-220

3

2

1

TO-247

3

1

D2PAK

Figure 2: Internal Schematic Diagram

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ UPS

Table 2: Order Codes

SALES TYPE

STP40N20

STW40N20

STB40N20

MARKING

P40N20

W40N20

B40N20

PACKAGE

TO-220

TO-247

D2PAK

June 2005

PACKAGING

TUBE

TUBE

TAPE & REEL

Rev. 3

1/13

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