75NF20 查看數據表（PDF） - STMicroelectronics

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75NF20

N-channel 200V - 0.028Ω- 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET™ Power MOSFET

STMicroelectronics 

STB75NF20 - STP75NF20 - STW75NF20

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM(1)

Source-drain current

Source-drain current (pulsed)

VSD(2) Forward on voltage

ISD = 75A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 75A,VDD = 100V

di/dt = 100 A/µs

Tj = 25°C (see Figure 20)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 75A, VDD = 100V

di/dt = 100 A/µs

Tj = 150°C (see Figure 20)

1. Pulse with limited by maximum temperature

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

75 A

300 A

1.6 V

222

ns

2.18

µC

19

A

267

ns

3

µC

22

A

5/16

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