STM4437 查看數據表（PDF） - Samhop Mircroelectronics

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STM4437

P-Channel Enhancement Mode Field Effect Transistor

Samhop Mircroelectronics 

S TM4431

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

P a ra meter

S ymbol Condition

Min Typ C Max Unit

DRAIN-SOURCE DIODE CHARACTERISTICS b

Diode Forward Voltage

VSD VGS = 0V, Is =-1.7A

5

-0.8 -1.2 V

Notes

a.Surface Mounted on FR 4 Board, t <=10sec.

b.P ulse Test:P ulse Width<=300us, Duty C ycle<= 2%.

c.Guaranteed by design, not subject to production testing.

10

-V GS =10,9,8,7,6,5,4,3V

8

6

4

2

-V GS =1.5V

0

0

2

4

6

8

10 12

-V DS , Drain-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

20

25 C

16

12

-55 C

8

T j=125 C

4

0

0

0.5 1

1.5 2

2.5 3

-V G S , G ate-to-S ource Voltage (V )

F igure 2. Trans fer C haracteris tics

1200

C is s

1000

800

600

400

200

C rss

0

0 5 10 15

C oss

20 25 30

-V DS , Drain-to S ource Voltage (V )

F igure 3. C apacitance

1.8

V G S =-10V

1.6

I D =-5 . 8 A

1.4

1.2

1.0

0.8

0.6

-55 -25 0 25 50 75 100 125

T j, J unction T emperature ( C )

F igure 4. On-R es is tance Variation with

Te mpe ra ture

3

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