STI14NM65N 查看數據表（PDF） - STMicroelectronics

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STI14NM65N

N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247

STMicroelectronics 

STB/F/I/P/W14NM65N

Electrical characteristics

Table 7.

Symbol

Switching times

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD =325 V, ID = 6 A

RG = 4.7 Ω VGS = 10 V

(see Figure 18)

Min Typ Max Unit

11

ns

13

ns

55

ns

20

ns

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min Typ Max Unit

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 12 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 12 A, di/dt = 100 A/µs

VDD = 100 V

(see Figure 20)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 12 A, di/dt = 100 A/µs

VDD = 100 V, TJ = 150 °C

(see Figure 20)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

12 A

48 A

1.3 V

390

ns

5

µC

25

A

530

ns

7

µC

25

A

5/18

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