STD50NH02LT4 查看數據表（PDF） - STMicroelectronics

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STD50NH02LT4

N-channel 24V - 0.0085Ω - 50A - DPAK/IPAK STripFET™ III Power MOSFET

STMicroelectronics 

STD50NH02L - STD50NH02L-1

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 25A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time ISD = 50A, di/dt = 100A/µs,

Reverse recovery charge VDD = 20V, Tj = 150°C

Reverse recovery current (see Figure 15)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Typ.

36

36

2

Max. Unit

50

A

200 A

1.3 V

ns

nC

A

5/16

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