SGB06N60 查看數據表（PDF） - Infineon Technologies

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SGB06N60

Fast IGBT in NPT-technology

Infineon Technologies 

SGP06N60, SGB06N60

SGD06N60, SGU06N60

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25°C,

VCC=400V,IC=6A,

VGE=0/15V,

R G =50Ω ,

Lσ1) =180nH,

Cσ1) =250pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

Unit

max.

25

18

220

54

0.110

0.105

0.215

30 ns

22

264

65

0.127 mJ

0.137

0.263

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=150°C

VCC=400V, IC=6A,

VGE=0/15V,

RG=50Ω,

Lσ1) =180nH,

Cσ1) =250pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

Unit

max.

24

17

248

70

0.167

0.153

0.320

29 ns

20

298

84

0.192 mJ

0.199

0.391

1) Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.

3

Jul-02

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