QL4009-1PF100I 查看數據表（PDF） - QuickLogic Corporation

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QL4009-1PF100I

9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM

QuickLogic Corporation 

QL4009 QuickRAM Data Sheet Rev B

Table 11: DC Characteristics

Symbol

Parameter

Conditions

VIH

VIL

VOH

VOL

II

IOZ

CI

IOS

ICC

ICCIO

Input HIGH Voltage

Input LOW Voltage

Output HIGH Voltage

Output LOW Voltage

I or I/O Input Leakage Current

3-State Output Leakage Current

Input Capacitanceb

Output Short Circuit Currentc

D.C. Supply Currentd

D.C. Supply Current on VCCIO

IOH = -12 mA

IOH = -500 µA

IOL = 16 mAa

IOL = 1.5 mA

VI = VCCIO or GND

VI = VCCIO or GND

VO = GND

VO = VCC

VI, VIO = VCCIO or GND

Min

Max Units

0.5VCC VCCIO+0.5 V

-0.5

0.3VCC

V

2.4

V

0.9VCC

V

0.45

V

0.1VCC

V

-10

10

µA

-10

10

µA

10

pF

-15

-180

mA

40

210

mA

0.50 (typ)

2

mA

0

100

µA

a. Applies only to -1/-2/-3/-4 commercial grade devices. These speed grades are also PCI-compliant. All

other devices have 8 mA IOL specifications.

b. Capacitance is sample tested only. Clock pins are 12 pF maximum.

c. Only one output at a time. Duration should not exceed 30 seconds.

d. For -1/-2/-3/-4 commercial grade devices only. Maximum ICC is 3 mA for -0 commercial grade and all

industrial grade devices. and 5 mA for all military grade devices. For AC conditions, contact QuickLog-

ic customer applications group.

© 2002 QuickLogic Corporation

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