RTF015N03 查看數據表（PDF） - ROHM Semiconductor
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RTF015N03 Datasheet PDF : 14 Pages
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RTF015N03
Nch 30V 1.5A Middle Power MOSFET
Datasheet
lOutline
VDSS
RDS(on)(Max.)
ID
PD
30V
240mΩ
±1.5A
0.8W
SOT-323T
TUMT3
for
d lFeatures
1) Low on - resistance.
e 2) 2.5V Drive.
d 3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TUMT3).
n s 5) Pb-free lead plating ; RoHS compliant
lInner circuit
me ign lPackaging specifications
Packing
sReel size (mm)
m e lApplication
o Switching
Type Tape width (mm)
Basic ordering unit (pcs)
D Taping code
c Marking
e w lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R e Drain - Source voltage
t N Continuous drain current
o Pulsed drain current
NGate - Source voltage
VDSS
30
ID
±1.5
IDP*1
±6.0
VGSS
±12
Embossed
Tape
180
8
3000
TL
PP
Unit
V
A
A
V
PD*2
0.8
W
Power dissipation
PD*3
0.75
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20151109 - Rev.001
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