GS74104J 查看數據表（PDF） - Giga Semiconductor

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GS74104J

1M x 4 4Mb Asynchronous SRAM

Giga Semiconductor 

Read Cycle 2: WE = VIH

Address

CE

OE

Data Out

tRC

tAA

tAC

tLZ

tOE

tOLZ

High impedance

tHZ

tOHZ

DATA VALID

GS74104TP/J

Write Cycle

Parameter

Write cycle time

Address valid to end of write

Chip enable to end of write

Data set up time

Data hold time

Write pulse width

Address set up time

Write recovery time (WE)

Write recovery time (CE)

Output Low Z from end of write

Write to output in High Z

-8

-10

-12

-15

Symbol

Unit

Min Max Min Max Min Max Min Max

tWC

8

—

10

—

12

—

15

—

ns

tAW

5.5 —

7

—

8

— 10 — ns

tCW

5.5 —

7

—

8

— 10 — ns

tDW

4

—

5

—

6

—

7

— ns

tDH

0

—

0

—

0

—

0

— ns

tWP

5.5 —

7

—

8

— 10 — ns

tAS

0

—

0

—

0

—

0

— ns

tWR

0

—

0

—

0

—

0

— ns

tWR1

0

—

0

—

0

—

0

—

ns

tWLZ*

3

—

3

—

3

—

3

— ns

tWHZ*

—

3.5

—

4

—

5

—

6

ns

* These parameters are sampled and are not 100% tested.

Rev: 1.07 1/2001

7/12

© 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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