RSM002N06 查看數據表（PDF） - ROHM Semiconductor
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RSM002N06 Datasheet PDF : 6 Pages
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RSM002N06
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Min.
-
60
-
1.0
-
-
-
-
0.25
-
-
-
-
-
-
-
Typ.
-
-
-
-
1.7
2.1
2.3
3.0
-
15
4.5
2.0
3.5
5
18
28
Max.
10
-
1
2.3
2.4
3.0
3.2
12.0
-
-
-
-
-
-
-
-
Unit
Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=60V, VGS=0V
V VDS=10V, ID=1mA
ID=250mA, VGS=10V
ID=250mA, VGS=4.5V
ID=250mA, VGS=4.0V
ID=10mA, VGS=2.5V
S ID=250mA, VDS=10V
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns ID=100mA, VDD 30V
ns VGS=10V
ns RL 300
ns RG=10
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
1.2
V Is=250mA, VGS=0V
Data Sheet
www.rohm.com
2/5
○c 2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.A
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