RN4902 查看數據表（PDF） - Toshiba

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RN4902

Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

Toshiba 

Q1, Q2 Common Maximum Ratings (Ta = 25°C)

Characteristic

Collector power dissipation

Junction temperature

Storage temperature range

* Total rating

Symbol

PC *

Tj

Tstg

Rating

Unit

200

mW

150

°C

−55~150

°C

Marking

RN4902

Equivalent Circuit (Top View)

Q1 Electrical Characteristics (Ta = 25°C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Input voltage (ON)

Input voltage (OFF)

Transition frequency

Collector output capacitance

Symbol

ICBO

ICEO

IEBO

hFE

VCE (sat)

VI (ON)

VI (OFF)

fT

Cob

Test

Circuit

Test Condition

― VCB = −50V, IE = 0

― VCE = −50V, IB = 0

― VEB = −10V, IC = 0

― VCE = −5V, IC = −10mA

― IC = −5mA, IB = −0.25mA

― VCE = −0.2V, IC = −5mA

― VCE = −5V, IC = −0.1mA

― VCE = −10V, IC = −5mA

― VCB = −10V, IE = 0, f = 1MHz

Min Typ. Max Unit

―

―

−0.38

50

―

−1.2

−1.0

―

―

―

―

―

―

−0.1

―

―

200

3

−100

−500

−0.71

―

−0.3

−2.4

−1.5

―

6

nA

mA

―

V

V

V

MHz

pF

2

2001-06-07

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