RN2311 查看數據表（PDF） - Toshiba
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RN2311 Datasheet PDF : 5 Pages
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RN2310,RN2311
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2310,RN2311
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1310, RN1311
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
−50
JEDEC
―
EIAJ
Unit
TOSHIBA
SC-70
2-2E1A
V
Weight: 0.006g
−50
V
−5
V
−100
mA
100
mW
150
°C
−55~150
°C
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation Frequency
Collector output capacitance
Input resistor
RN2310
RN2311
Symbol
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
Test
Circuit
Test Condition
― VCB = −50V, IE = 0
― VEB = −5V, IC = 0
― VCE = −5V, IC = −1mA
― IC = −5mA, IB = −0.25mA
― VCE = −10V, IC = −5mA
― VCB = −10V, IE = 0, f = 1MHz
R1
―
―
Min Typ. Max Unit
―
― −100 nA
―
― −100 nA
120 ―
400
―
―
−0.1 −0.3
V
― 200
―
MHz
―
3
6
pF
3.29 4.7 6.11
kΩ
7
10
13
1
2001-06-07
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