RN2101CT 查看數據表（PDF） - Toshiba

零件编号

产品描述 (功能)

生产厂家

RN2101CT

Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

Toshiba 

RN2101CT

-10000

IC - VI(OFF)

EMITTER

COMMON

VCE= -5V

-1000

Ta=100°C

25

-25

-100

-10

-0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2

INPUT VOLTAGE　VI(OFF) ( V)

RN2103CT

-10000

IC - VI(OFF)

EMITTER

COMMON

VCE= -5V

-1000 Ta=100°C

25

-25

-100

-10

-0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2

INPUT VOLTAGE　VI(OFF) ( V)

RN2105CT

-10000

IC - VI(OFF)

EMITTER

COMMON

VCE= -5V

-1000

Ta=100°C 25

-25

-100

-10

-0

-0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4

INPUT VOLTAGE　VI(OFF) ( V)

RN2101CT ~ RN2106CT

RN2102CT

-10000

IC - VI(OFF)

-1000

Ta=100°C

25

-25

-100

EMITTER

COMMON

VCE= -5V

-10

-0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2

INPUT VOLTAGE　VI(OFF) ( V)

RN2104CT

-10000

IC - VI(OFF)

-1000 Ta=100°C

25

-25

-100

EMITTER

COMMON

VCE= -5V

-10

-0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2

INPUT VOLTAGE VI(OFF) ( V)

RN2106CT

-10000

IC - VI(OFF)

-1000

Ta=100°C 25

-25

-100

-10

-0

EMITTER

COMMON

VCE= -5V

-0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4

INPUT VOLTAGE VI(OFF) ( V)

4

2009-04-17

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