R6018ANJ 查看數據表（PDF） - ROHM Semiconductor

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R6018ANJ

Nch 600V 18A Power MOSFET

ROHM Semiconductor 

R6018ANJ

　 　 　 　　 　

　 　 　 　 　 　 　 　 Datasheet

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Transconductance

gfs*6 VDS = 10V, ID = 9A

6.5 13 -

S

Input capacitance

Output capacitance

r Reverse transfer capacitance

o Effective output capacitance,

f energy related

Effective output capacitance,

d time related

e Turn - on delay time

d Rise time

n s Turn - off delay time

e n Fall time

Ciss VGS = 0V

Coss VDS = 25V

Crss f = 1MHz

Co(er)

Co(tr)

VGS = 0V,

VDS = 0V to 480V

td(on)*6

tr*6

td(off)*6

tf*6

VDD ⋍ 300V, VGS = 10V

ID = 9A

RL ⋍ 33.3Ω

RG = 10Ω

- 2050 -

- 1400 - pF

- 60 -

- 80 -

pF

- 85 -

- 37 -

- 85 -

ns

- 155 310

- 65 130

m ig lGate charge characteristics (Ta = 25°C)

s Parameter

Symbol

Conditions

m e Total gate charge

o D Gate - Source charge

c Gate - Drain charge

e w Gate plateau voltage

Qg*6

Qgs*6

Qgd*6

V(plateau)

VDD ⋍ 300V

ID = 18A

VGS = 10V

VDD ⋍ 300V, ID = 18A

Values

Unit

Min. Typ. Max.

- 55 -

- 10 - nC

- 22 -

-

6

-

V

t R e *1 Limited only by maximum temperature allowed.

N *2 Pw ≤ 10μs, Duty cycle ≤ 1%

No *3 L ⋍ 500μH, VDD=50V, RG=25Ω, starting Tj=25°C

*4 L ⋍ 500μH, VDD=50V, RG=25Ω, starting Tj=25°C, f=10kHz

*5 Reference measurement circuits Fig.5-1.

*6 Pulsed

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

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