PT800J(2007) 查看數據表（PDF） - Diotec Semiconductor Germany

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PT800J
(Rev.:2007)

Silicon Rectifiers – Single Diode

Diotec Semiconductor Germany  

Characteristics

Leakage current

Sperrstrom

Thermal resistance junction to case

Wärmewiderstand Sperrschicht – Gehäuse

PT800A ... PT800M

Tj = 25°C VR = VRRM

IR

Kennwerte

< 10 µA

RthC

< 2.5 K/W

120

[%]

100

80

60

40

20

IFAV

0

0 TC 50

100

150 [°C]

Rated forward current vs. temp. of the case

Zul. Richtstrom in Abh. v. d. Gehäusetemperatur

102

[A]

10

Tj = 125°C

1

Tj = 25°C

10-1

IF

10-2

200a-(5a-0.95v)

0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8

Forward characteristics (typical values)

Durchlasskennlinien (typische Werte)

2

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