PMK35EP 查看數據表（PDF） - NXP Semiconductors.
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PMK35EP Datasheet PDF : 12 Pages
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NXP Semiconductors
PMK35EP
P-channel TrenchMOS extremely low level FET
−4
VGS(th)
(V)
−3
−2
−1
max.
typ.
min.
003aab613
−10−3
ID
(A)
−10−4
−10−5
003aab612
min.
typ.
max.
0
−60
0
60
120
180
Tj (°C)
ID = -1 mA; VDS = VGS
Fig 7. Gate-source threshold voltage as a function of
junction temperature
−10−6
0
−1
−2
−3
−4
VGS (V)
Tj = 25 °C; VDS = -5 V
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
2
a
1.5
003aab614
100
RDSon
(mΩ)
75
VGS (V) = −3
−3.5
003aab607
1
0.5
0
−60
0
60
120
180
Tj (°C)
50
25
0
0
−10
Tj = 25 °C
−4
−4.5
−5
−20
−30
ID (A)
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 10. Drain-source on-state resistance as a function
of drain current; typical values
PMK35EP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 April 2010
© NXP B.V. 2010. All rights reserved.
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