PMEG3002AEB 查看數據表（PDF） - Philips Electronics
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PMEG3002AEB Datasheet PDF : 8 Pages
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Philips Semiconductors
Low VF MEGA Schottky barrier diode
Product specification
PMEG3002AEB
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF
continuous forward voltage
IR
continuous reverse current
Cd
diode capacitance
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
CONDITIONS
TYP.
see Fig.2
IF = 0.1 mA
130
IF = 1 mA
190
IF = 10 mA
255
IF = 100 mA
355
IF = 200 mA
420
VR = 10 V; see Fig.3; note 1 2.5
VR = 1 V; f = 1 MHz; see Fig.4 20
MAX. UNIT
190
mV
250
mV
300
mV
400
mV
480
mV
10
µA
25
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to
ambient
note 1
Note
1. Refer to SOD523 (SC-79) standard mounting conditions.
CONDITIONS
VALUE
450
UNIT
K/W
2002 May 06
3
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