PHX4N60E 查看數據表（PDF） - Philips Electronics

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PHX4N60E

PowerMOS transistors Avalanche energy rated

Philips Electronics 

Philips Semiconductors

PowerMOS transistors

Avalanche energy rated

Product specification

PHX4N60E

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

IS

Continuous source current Ths = 25˚C

(body diode)

ISM

Pulsed source current (body Ths = 25˚C

diode)

VSD

Diode forward voltage

IS = 4.5 A; VGS = 0 V

trr

Reverse recovery time

IS = 4.5 A; VGS = 0 V; dI/dt = 100 A/µs

Qrr

Reverse recovery charge

MIN. TYP. MAX. UNIT

-

- 4.5 A

-

- 18 A

-

- 1.2 V

- 480 - ns

-

4

- µC

December 1998

3

Rev 1.200

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