PDTA144V 查看數據表（PDF） - Philips Electronics
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PDTA144V Datasheet PDF : 18 Pages
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Philips Semiconductors
PDTA144V series
PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = −50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = −30 V; IB = 0 A
VCE = −30 V; IB = 0 A;
Tj = 150 °C
VEB = −5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = −5 V; IC = −5 mA
IC = −10 mA; IB = −0.5 mA
VI(off)
VI(on)
off-state input voltage VCE = −5 V; IC = −100 µA
on-state input voltage VCE = −300 mV; IC = −2 mA
R1
bias resistor 1 (input)
R2/R1
bias resistor ratio
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
Min
Typ
Max
Unit
-
-
−100
nA
-
-
−1
µA
-
-
−50
µA
-
-
−150
µA
40
-
-
-
-
−150
mV
-
−3.1
−1
V
−6
−3.8
-
V
33
47
61
kΩ
0.17
0.21
0.26
-
-
2
pF
9397 750 14482
Product data sheet
Rev. 03 — 22 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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