2N2222A 查看數據表（PDF） - Philips Electronics
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2N2222A Datasheet PDF : 5 Pages
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Philips Semiconductors
NPN switching transistors
Product specification
2N2222; 2N2222A
FEATURES
• High current (max. 800 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Linear amplification and switching.
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpa1ge
2
3
3
2
MAM264
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
2N2222
2N2222A
VCEO
collector-emitter voltage
2N2222
2N2222A
IC
collector current (DC)
Ptot
total power dissipation
hFE
DC current gain
fT
transition frequency
2N2222
2N2222A
toff
turn-off time
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
IC = 10 mA; VCE = 10 V
IC = 20 mA; VCE = 20 V; f = 100 MHz
ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA
MIN. MAX. UNIT
−
60
V
−
75
V
−
30
V
−
40
V
−
800
mA
−
500
mW
75
−
250
−
MHz
300
−
MHz
−
250
ns
1997 May 29
2
75
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