BAS70-04LT1 查看數據表（PDF） - Leshan Radio Company

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BAS70-04LT1

Dual Series Schottky Barrier Diode

Leshan Radio Company 

LESHAN RADIO COMPANY, LTD.

Dual Series

Schottky Barrier Diode

These Schottky barrier diodes are designed

for high speed switching applications, circuit

protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Min-

iature surface mount package is excellent for

hand held and portable applications where

space is limited.

• Extremely Fast Switching Speed

• Low Forward Voltage — 0.75 Volts (Typ)

@ IF = 10 mAdc

BAS70-04LT1

3

1

2

CASE 318–08, STYLE 11

SOT–23 (TO–236AB)

* 70V SCHOTTKY BARRIER DIODES

ANODE

1

CATHODE

2

3

CATHODE/ANODE

MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)

Rating

Reverse Voltage

Forward Power Dissipation

@ TA = 25°C

Derate above 25°C

Operating Junction and Storage

Temperature Range

Symbol

VR

PF

TJ, Tstg

Value

70

225

1.8

–55 to +150

Unit

Volts

mW

mW/°C

°C

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Reverse Breakdown Voltage (IR = 10 µA)

V(BR)R

70

—

Total Capacitance (VR = 1.0 V, f = 1.0 MHz)

CT

—

2.0

Reverse Leakage (VR = 50 V)

IR

—

0.1

(VR = 70V)

—

10

Forward Voltage (IF = 1.0 mAdc)

VF

—

410

Forward Voltage (IF = 10 mAdc)

VF

—

750

Forward Voltage (IF = 15 mAdc)

VF

—

1.0

Unit

Volts

pF

µAdc

mVdc

mVdc

Vdc

BAS70-04LT1–1/2

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