NLX2G08(2009) 查看數據表（PDF） - ON Semiconductor
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NLX2G08 Datasheet PDF : 5 Pages
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NLX2G08
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VIH
High−Level Input Voltage
Condition
VIL
Low−Level Input Voltage
VOH
High−Level Output Voltage IOH = 100 mA
VIN = VIL or VIH
IOH = −3 mA
IOH = −8 mA
IOH = −12 mA
IOH = −16 mA
IOH = −24 mA
IOH = −32 mA
VOL
Low−Level Output Voltage IOL = 100 mA
VIN = VIH or VOH
IOL = 3 mA
IOL = 8 mA
IOL = 12 mA
IOL = 16 mA
IOL = 24 mA
IOL = 32 mA
IIN
Input Leakage Current
VIN = VCC or GND
ICC
Quiescent Supply Current VIN = VCC or GND
VCC
(V)
1.65
2.3 to 5.5
1.65
2.3 to 5.5
1.65 to 5.5
165
2.3
2.7
3.0
3.0
4.5
1.65 to 5.5
2.3
2.7
3.0
3.0
4.5
0 to 5.5
5.5
TA = 255C
Min
Typ Max
−555C v TA v 1255C
Min
Max Unit
0.75 VCC
0.7 VCC
0.75 VCC
V
0.7 VCC
0.25 VCC
0.3 VCC
0.25
V
0.3 VCC
VCC − 0.1 VCC
VCC − 0.1
V
1.29
1.5
1.5
1.9
2.1
1.9
2.2
2.4
2.2
2.4
2.7
2.4
2.3
2.5
2.3
3.8
4.0
3.8
0.1
0.08 0.24
0.20
0.3
0.22
0.4
0.28
0.4
0.38 0.55
0.42 0.55
0.1
V
0.24
0.3
0.4
0.4
0.55
0.55
$0.1
$1.0 mA
1.0
10
mA
AC ELECTRICAL CHARACTERISTICS tR = tF = 3.0 ns
Symbol
Parameter
tPLH
Propagation Delay
tPHL
(Figure 3 and 4)
Condition
RL = 1 MW, CL = 15 pF
RL = 1 MW, CL = 15 pF
RL = 500 W, CL = 50 pF
RL = 1 MW, CL = 15 pF
RL = 500 W, CL = 50 pF
VCC
(V)
1.8 $ 0.15
2.5 $ 0.2
3.3 $ 0.3
5.0 $ 0.5
TA = 255C
Min Typ Max
2.0
5.7 10.5
1.0
3.5
5.8
0.8
2.6
3.9
1.2
3.2
4.8
0.5
1.9
3.1
0.8
2.5
3.7
−555C v TA v 1255C
Min
Max Unit
2.0
11.0
ns
2.0
6.2
0.8
4.3
1.2
5.2
0.5
3.3
0.8
4.0
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
Typical Unit
CIN
Input Capacitance
VCC = 5.5 V, VI = 0 V or VCC
4
pF
CPD
Power Dissipation Capacitance
(Note 7)
10 MHz, VCC = 3.3 V, VI = 0 V or VCC
10 MHz, VCC = 5.5 V, VI = 0 V or VCC
25
pF
30
7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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