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NIS5112

Electronic Fuse

ON Semiconductor 

NIS5112

Electronic Fuse

The NIS5112 is an integrated switch utilizing a high side N−channel

FET driven by an internal charge pump. This switch features a

MOSFET which allows for current sensing using inexpensive chip

resistors instead of expensive, low impedance current shunts.

It is designed to operate in 12 V systems and includes a robust

thermal protection circuit.

Features

• Integrated Power Device

• Power Device Thermally Protected

• No External Current Shunt Required

• Enable/Timer Pin

• Adjustable Slew Rate for Output Voltage

• 9 V to 18 V Input Range

• 30 mW Typical

• Internal Charge Pump

• ESD Ratings: Human Body Model (HBM); 4000 V

• These are Pb−Free Devices

Typical Applications

• Hard Drives

8

1

www.onsemi.com

MARKING

DIAGRAM

SOIC−8 NB

CASE 751

8

112x

AYWWG

G

1

x

= L for thermal latch off

= H for thermal auto−retry

A

= Assembly Location

Y

= Year

WW = Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device

NIS5112D1R2G

Package

SOIC−8

Latch Off

(Pb−Free)

Shipping†

2500

Tape & Reel

8

NIS5112D2R2G

SOIC−8

2500 /

VCC

Auto−Retry Tape & Reel

(Pb−Free)

Voltage

Regulator

Charge

Pump

Thermal

Latch

Overvoltage

Clamp

Current

Limit

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Current Limit

4

Source

5, 6, 7

Enable/

Timer

Voltage

Slew Rate

Enable/Timer

3

GND

1

Figure 1. Block Diagram

dV/dt

2

© Semiconductor Components Industries, LLC, 2011

1

April, 2017 − Rev. 10

Publication Order Number:

NIS5112/D

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