NE6510179A-A 查看數據表（PDF） - California Eastern Laboratories.

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NE6510179A-A

NEC's 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

California Eastern Laboratories. 

NE6510179A

NONLINEAR MODEL

SCHEMATIC

Q1

GATE

LGX

0.001 nH

LG

0.75 nH

CGS PKG

0.1 pF

RDX

LD

0.65 nH

0.2 ohms

RDBX

400 ohms

LDX

0.01 nH

DRAIN

CBSX

100 pF

RSX

0.05 ohms

CDS PKG

0.1 pF

LSX

0.001 nH

SOURCE

FET NONLINEAR MODEL PARAMETERS (1)

Parameters

VTO

VTOSC

ALPHA

BETA

GAMMA

GAMMADC(2)

Q

DELTA

VBI

IS

N

RIS

RID

TAU

CDS

RDB

CBS

CGSO(3)

CGDO(4)

DELTA1

DELTA2

FC

VBR

Q1

-0.756

0

2

2.245

0

0.01

1.7

0

0.6

1e-16

1

0

0

10e-12

0.5e-12

0.001

0

20e-12

4e-12

0.3

0.2

0.5

Infinity

Parameters

RG

RD

RS

RGMET

KF

AF

TNOM

XTI

EG

VTOTC

BETATCE

FFE

Q1

0.05

0.001

0.001

0

0

1

27

3

1.43

0

0

1

(1) Series IV Libra TOM Model

The parameter in Libra corresponds to the parameter in PSpice:

(2) GAMMADC

GAMMA

(3) CGSO

CGS

(4) CGDO

CGD

UNITS

Parameter

capacitance

inductance

resistance

Units

picofarads

nanohenries

ohms

MODEL RANGE

Frequency: 0.5 to 4 GHz

Bias:

VDS = 2.2 V to 5 V, ID = 150 mA to 300 mA

Date:

3/29/2000

Life Support Applications

These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably

be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and

agree to fully indemnify CEL for all damages resulting from such improper use or sale.

11/04/2002

A Business Partner of NEC Compound Semiconductor Devices, Ltd.

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