NCV4290DS50R4G 查看數據表（PDF） - ON Semiconductor
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NCV4290DS50R4G Datasheet PDF : 16 Pages
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NCV4290
TYPICAL PERFORMANCE CHARACTERISTICS
3.5
VI = 13.5 V, TJ = 25°C
3.0
2.5
2.0
1.5
1.0
0.5
80
70 VI = 13.5 V, TJ = 25°C
60
50
40
30
20
10
0.0
0
0
20
40
60
80
100
120
0
100 200
300 400
500
600
IQ, OUTPUT CURRENT (mA)
IQ, OUTPUT CURRENT (mA)
Figure 8. Current Consumption Iq vs.
Output Current IQ
Figure 9. Current Consumption Iq vs.
Output Current IQ
8
7
6
5
4
VI = 13.5 V, VD = 1.0 V
3
2
1
0
−40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Charge Current ID,C vs. Temperature TJ
2.0
1.8
1.6
VDU
1.4
1.2
VI = 13.5 V
1.0
0.8
VDL
0.6
0.4
0.2
0.0
−40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Delay Switching Threshold VDU, VDL vs.
Temperature TJ
700
600
500
TJ = 125°C
400
300
TJ = 25°C
200
100
0
0 100 200 300 400 500 600 700
IQ, OUTPUT CURRENT (mA)
Figure 12. Drop Voltage Vdr vs. Output Current IQ
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