N5027L-N-TF3-T 查看數據表（PDF） - Unisonic Technologies

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N5027L-N-TF3-T

HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR

Unisonic Technologies 

N5027

■ TYPICAL CHARACTERISTICS

Static Characteristic

Collector Current vs. Collector-Emitter Voltage

4.0

3.6

3.2

2.8

2.4

IB=150 mA

2.0

IB=100 mA

1.6

1.2

IB =50 mA

0.8

0.4

IB =10 mA

0.0

0 1 2 3 4 5 6 7 8 9 10

Collector-Emitter Voltage, VCE (V)

Saturation Voltage vs. Collector Current

10

Ic=5IB

1

0.1

0.01

0.01

100us

0.1

1ms

1

10

Collector Current, IC (A)

Switching Time

Time vs. Collector-Emitter Voltage

10

Vcc=400 V

5.IB1= - 2.5.I B2=Ic

1

0.1

0.01

0.1

1ms

1

10

Collector-Emitter Voltage, VCE (V)

NPN SILICON TRANSISTOR

1000

DC Current Gain vs. Collector Current

VCE=5V

100

10

1

100us

0.01

0.1

1ms

1

10

Collector Current, IC (A)

Collector Current vs. Base-Emitter Voltage

4.0

VCE=5V

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Base-Emitter Voltage, VBE (V)

Safe Operating Area

Collector Current vs. Collector-Emitter Voltage

100

IcMAX.(Pulse)

10

IcMAX.(Continuous )

1

0.1

0.01

1E-s

1

10

100

1000

10000

Collector-Emitter Voltage, VCE (V)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 4

QW-R203-032,A

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