MT28C6428P18 查看數據表（PDF） - Micron Technology

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MT28C6428P18

FLASH AND SRAM COMBO MEMORY

Micron Technology 

ADVANCE

4 MEG x 16 ASYNCHRONOUS/PAGE FLASH

512K x 16 SRAM COMBO MEMORY

BLOCK DIAGRAM

F_WE#

F_OE#

F_CE#

F_RP#

A19–A20

A0–A18

S_CE1#

S_CE2

S_OE#

S_WE#

F_VCC

F_VPP

FLASH

Bank a

4,096K x 16

Bank b

SRAM

512K x 16

S_VCC

F_WP#

F_VSS

VCCQ

DQ0–DQ15

S_VSS

S_UB#

S_LB#

F_RST#

F_CE#

F_WE#

F_OE#

DQ0-DQ15

Data Input

Buffer

CSM

WSM

I/O Logic

FLASH FUNCTIONAL BLOCK DIAGRAM

Data

Register

Program/

Erase

Pump Voltage

Generators

X DEC

Y/Z DEC

PR Lock

Query/OTP

Bank 1 Blocks

Y/Z Gating/Sensing

PR Lock

Query

OTP

Manufacturer’s ID

Device ID

Block Lock

RCR

ID Reg.

Status

Reg.

DQ0–DQ15

Output

Multiplexer

Output

Buffer

A0–A21

Address

Input

Buffer

Address

CNT/WSM

Address Latch

Address

Multiplexer

Y/Z DEC

X DEC

Y/Z Gating/Sensing

Bank 2 Blocks

4 Meg x 16 Asynchronous/Page Flash 512K x 16 SRAM Combo Memory

MT28C6428P20_3.p65 – Rev. 3, Pub. 7/02

4

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

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