MMBTH10L 查看數據表（PDF） - Unisonic Technologies

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MMBTH10L

NPN SILICON TRANSISTOR

Unisonic Technologies 

MMBTH10

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

3

V

SOT-23

Power Dissipation

SOT-323/SOT-523

PC

225

mW

200

mW

Collector current

IC

50

mA

Junction Temperature

Storage Temperature

TJ

TSTG

150

°C

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°С unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage BVCBO IC=100µA

30

V

Collector-Emitter Breakdown Voltage BVCEO IC=1mA

25

V

Emitter-Base Breakdown Voltage

BVEBO IE=10µA

3

V

Collector-Emitter Saturation Voltage VCE(SAT) IC=4mA, IB=400µA

500 mV

Base-Emitter on Voltage

VBE(ON) VCE=10V, IC=4mA

950 mV

Collector Cut-off Current

ICBO VCB=25V

100 nA

Emitter Cut-off Current

IEBO VEB=2V

100 nA

DC Current Gain

hFE VCE=10V, IC=4mA

60

Output Capacitance

Cob VCB=10V, f=1MHZ

0.7

pF

Current Gain Bandwidth Product

fT VCE=10V, IC=4mA, f=100MHz 650

MHz

„ CLASSIFICATION OF hFE

RANK

RANGE

A

60-100

B

90-130

C

120-200

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-003.F

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