MJE15032(2014) 查看數據表（PDF） - ON Semiconductor

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MJE15032
(Rev.:2014)

Complementary Silicon Plastic Power Transistors

ON Semiconductor 

MJE15032 (NPN), MJE15033 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 10 mAdc, IB = 0)

Collector Cutoff Current

(VCB = 250 Vdc, IE = 0)

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

VCEO(sus)

250

ICBO

−

IEBO

−

Vdc

−

mAdc

10

mAdc

10

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 0.5 Adc, VCE = 5.0 Vdc)

(IC = 1.0 Adc, VCE = 5.0 Vdc)

(IC = 2.0 Adc, VCE = 5.0 Vdc)

hFE

−

70

−

50

−

10

−

Collector−Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.1 Adc)

Base−Emitter On Voltage

(IC = 1.0 Adc, VCE = 5.0 Vdc)

VCE(sat)

−

VBE(on)

−

Vdc

0.5

Vdc

1.0

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT

MHz

30

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2. fT = ⎪hfe⎪• ftest.

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