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MCIMX257DJM4(2009) 查看數據表(PDF) - Freescale Semiconductor

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产品描述 (功能)
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MCIMX257DJM4
(Rev.:2009)
Freescale
Freescale Semiconductor 
MCIMX257DJM4 Datasheet PDF : 132 Pages
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3.4.1.2 DDR_TYPE = 01 SDRAM I/O DC Parameters
Table 14 shows the DC I/O parameters for SDRAM.
Table 14. SDRAM DC Electrical Characteristics
DC Electrical Characteristics Symbol Test Conditions
High-level output voltage
Voh Ioh = Specified Drive
(Ioh = –4, –8, –12,
–16mA)
Low-level output voltage
Vol
Ioh = Specified Drive
(Ioh = 4, 8, 12, 16mA)
High-level output current
I
Standard Drive
High Drive
Ioh
Max. Drive
Low-level output current
I
Standard Drive
High Drive
Iol
Max. Drive
High-level DC input voltage
VIH
Low-level DC input voltage
VIL
Input current (no pull-up/down)
IIN
VI = 0
VI = OVDD
High-impedance I/O supply current Icc-ovdd VI = OVDD or 0
High-impedance core supply
current
Icc-vddi
VI = VDD or 0
Min.
2.4
–4.0
–8.0
–12.0
4.0
8.0
12.0
2.0
–0.3 V
Typ.
Max.
Units Notes
V
1
0.4
V
1
mA —
mA —
3.6
0.8
150
80
1180
1220
V
V
nA 2, 3
nA 2, 3
nA
Note:
1. Simulation circuit for parameters Voh and Vol for I/O cells is below
2. Minimum condition: bcs model, OVDD = 3.6 V, and –40 °C. Typical condition: typical model, OVDD = 3.3 V, and 25 °C.
Maximum condition: wcs model, OVDD = 3.0 V, and 105 °C.
3. Typical condition: typical model, OVDD = 3.3 V, and 25 °C. Maximum condition: bcs model, OVDD = 3.6 V, and 105 °C.
3.4.1.3 DDR_TYPE = 10 Max Setting DDR I/O DC Parameters
Table 15 shows the I/O parameters for DDR2 (SSTL_18).
Table 15. DDR2 (SSTL_18) I/O DC Electrical Characteristics
DC Electrical Characteristics
High-level output voltage
Low-level output voltage
Output min. source current
Output min. sink current
DC input logic high
DC input logic low
Symbol
Voh
Vol
IIoh
IIol
VIH(dc)
VIL(dc)
Test
Conditions
Min.
OVDD – 0.28
–13.4
13.4
OVDD/2 + 0.125
–0.3 V
Typ.
Max.
Units Notes
V
0.28
V
mA
1
mA
2
OVDD + 0.3
V
OVDD/2 – 0.125 V
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 2
Freescale Semiconductor
19

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