MC33560DW 查看數據表（PDF） - ON Semiconductor

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MC33560DW

Power Management and Interface IC for Smartcard Readers and Couplers

ON Semiconductor 

MC33560

ELECTRICAL CHARACTERISTICS (continued) These specifications are written in the same style as common for standard

integrated circuits. The convention considers current flowing into the pin (sink current) as positive and current flowing out of the pin

(source current) as negative. (Conditions: VBAT = 4.0 V, VCC = 5.0 V nom, PWRON = VBAT , Operating Mode, −ICC = 10 mA, −25°C ≤ TA

≤ 85°C, L1 = 47 mH, RLIM = 0 W, CRDVCC capacitor = 10 mF, unless otherwise noted.)

Characteristic

Test Conditions

Symbol Min

Typ

Max

Unit

DIGITAL DYNAMIC SECTION (VBAT = 5.0 V, Normal Operating Mode) (Note 6)

Card Detection Filter Time:

Card Insertion

Card Extraction

tfltin

50

−

150

ms

tfltout

50

−

150

ms

Internal Reset Delay

RES, VCC Powerup / Powerdown

tdres

−

20

−

ms

Ready Delay Time

Pin 4

tdrdy

−

−

2.0

ms

PWRON low Pulse Width

CS = L, Pin 2

twon

2.0

−

−

ms

DIGITAL DYNAMIC SECTION (VBAT = 5.0 V, programming mode) (Note 6)

Data Setup Time

RDYMOD, PWRON, RESET, IO

Pins 2, 4, 6, 7

tsmod

1.0

−

ms

−

Data Hold Time

RDYMOD, PWRON, RESET, IO

Pins 2, 4, 6, 7

thmod

1.0

−

ms

−

CS low Pulse Width

Pin 5

twcs

2.0

−

−

ms

4. See Figures 2 and 3.

5. The transistors T1 on lines IO, C4 and C8 (see Figure 24) have a max Rdson of 250 W.

6. Pin loading = 30 pF, except INVOUT = 15 pF.

7. As the clock buffer is optimized for low power consumption and hence not symmetrical, clock signal duty cycle is guaranteed for divide

by 2 and divide by 4 ratio.

8. In either direction.

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