MC100E241FNG 查看數據表（PDF） - ON Semiconductor
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MC100E241FNG Datasheet PDF : 7 Pages
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MC100E241
Table 6. AC CHARACTERISTICS VCCx = 5.0 V; VEE = 0.0 V or VCCx = 0.0 V; VEE = −5.0 V (Note 5)
0°C
25°C
85°C
Symbol
fMAX
fSHIFT
tPLH
tPHL
Characteristic
Maximum Toggle Frequency
Max. Shift Frequency
Propagation Delay to Output
Min Typ Max Min Typ Max Min Typ Max Unit
900
900
900
GHz
700 900
700 900
700 900
MHz
ps
CLK 625 750 975 625 750 975 625 750 975
MR 600 725 975 600 725 975 600 725 975
ts
Setup Time
ps
D 175 25
175 25
175 25
SEL0 (SHIFT) 350 200
350 200
350 200
SEL1 (HOLD/LOAD) 400 250
400 250
400 250
S-IN 125 −100
125 −100
125 −100
th
Hold Time
ps
D 200 −25
200 −25
200 −25
SEL0 (SHIFT) 100 −200
100 −200
100 −200
SEL1 (HOLD/LOAD) 50 −250
50 −250
50 −250
S-IN 300 100
300 100
300 100
tRR
Reset Recovery Time
900 600
900 600
900 600
ps
tPW
Minimum Pulse Width
ps
CLK, MR 400
400
400
tSKEW
tJITTER
tr
tf
Within-Device Skew (Note 6)
Random Clock Jitter (RMS)
Rise/Fall Times
(20 - 80%)
60
60
60
ps
<1
<1
<1
ps
ps
300 525 800 300 525 800 300 525 800
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
5. 100 Series: VEE can vary −0.46 V / +0.8 V.
6. Within-device skew is defined as identical transitions on similar paths through a device.
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