MBRS190T3 查看數據表（PDF） - ON Semiconductor

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MBRS190T3

Schottky Power Rectifier Surface Mount Power Package

ON Semiconductor 

MBRS1100T3, MBRS190T3

THERMAL CHARACTERISTICS

Rating

Thermal Resistance − Junction−to−Lead (TL = 25°C)

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C)

Maximum Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, TJ = 25°C)

(Rated dc Voltage, TJ = 100°C)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

Symbol

RqJL

VF

IR

Value

22

0.75

0.5

5.0

Unit

°C/W

V

mA

ORDERING INFORMATION

Device

MBRS1100T3

Marking

B1C

Package

SMB

Shipping†

2500 Tape & Reel

MBRS1100T3G

B1C

SMB

(Pb−Free)

2500 Tape & Reel

MBRS190T3

B19

SMB

2500 Tape & Reel

MBRS190T3G

B19

SMB

(Pb−Free)

2500 Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

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