MBRS1100T3(2000) 查看數據表（PDF） - ON Semiconductor
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MBRS1100T3 Datasheet PDF : 4 Pages
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MBRS1100T3, MBRS190T3
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction to Lead (TL = 25°C)
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1.)
(iF = 1.0 A, TJ = 25°C)
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
Symbol
RθJL
VF
IR
Value
22
0.75
0.5
5.0
Unit
°C/W
Volts
mA
TYPICAL ELECTRICAL CHARACTERISTICS
20
10
5
TJ = 150°C
2
1
100°C
0.5
25°C
0.2
0.1
0.05
0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1K
400
200
100
40
20
10
4
2
1
0.4
0.2
0.1
0.04
0.02
0.01
0
TJ = 150°C
125°C
100°C
25°C
10 20 30 40 50 60 70 80
VR, REVERSE VOLTAGE (VOLTS)
90 100
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be estimated
from these curves if VR is sufficient below rated VR.
3.2
2.8
TJ = 100°C
2.4
2.0
SQUARE
1.6
WAVE
1.2
DC
4.0
RATED VR APPLIED
3.5 RθJL = 22°C/W
TJ = 100°C
3.0
2.5
2.0
1.5
DC
SQUARE
WAVE
0.8
1.0
0.4
0.5
0
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
20
40
60
80 100 120 140 160
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
TL, LEAD TEMPERATURE (°C)
Figure 3. Power Dissipation
Figure 4. Current Derating, Lead
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