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MAX17000ETG(2011) 查看數據表(PDF) - Maxim Integrated

零件编号
产品描述 (功能)
生产厂家
MAX17000ETG
(Rev.:2011)
MaximIC
Maxim Integrated 
MAX17000ETG Datasheet PDF : 32 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
Complete DDR2 and DDR3 Memory
Power-Management Solution
+5V
R3
100k
R2
100k
+5V
CVDD
1µF
PGND
5V VCC
R1
10
CVCC
1µF
AGND
SLP_S3#
ON/OFF
VCC
1
OVP
2
PGOOD1
3
PGOOD2
19
VDD
23
VCC
RTON
14
TON
BST 17
15
DH
CBST
0.1µF
LX 16
18
DL
NL
PGND1 20
CSH 13
CSL 12
VIN
7V TO 20V
CIN
NH
PGND
L1
RSENSE
D1
PGND
VDDQ
+1.8V OR 1.5V
COUT
PGND
21 AGND MAX17000
FB 11
4
STDBY
24
SHDN
22 SKIP
10
REFIN
VTTI 9
PGND2 7
VTT
VTTS
VTTR
PGND
8
5
6
EP
AGND
PGND
RFBA
RFBB
AGND
FB OPTIONS:
1. CONNECT FB TO 5V FOR FIXED +1.8V.
2. CONNECT FB TO GND FOR FIXED +1.5V.
3. USE FB RESISTOR-DIVIDER FOR ADJUSTABLE
OUTPUT VOLTAGES.
CVTTI
+1V TO + 2.5V
CVTT
VTT = VDDQ/2
CVTTR
0.33µF
AGND
VTTR = VDDQ/2
Figure 1. MAX17000 Standard Application Circuit
Detailed Description
The MAX17000 complete DDR solution comprises a
step-down controller, a source/sink LDO regulator, and a
reference buffer. Maxim’s proprietary Quick-PWM pulse-
width modulator in the MAX17000 is specifically
designed for handling fast load steps while maintaining a
relatively constant operating frequency and inductor
operating point over a wide range of input voltages. The
Quick-PWM architecture circumvents the poor load-tran-
sient timing problems of fixed-frequency current-mode
PWMs, while also avoiding the problems caused by
widely varying switching frequencies in conventional con-
stant-on-time and constant-off-time PWM schemes.
Figure 1 is the MAX17000 standard application circuit
and Figure 2 is the MAX17000 functional diagram.
The MAX17000 includes a ±2A source/sink LDO regu-
lator for the memory termination rail. The source/sink
regulator features a dead band that either sources or
sinks, ideal for the fast-changing short-period loads
presenting in memory termination applications. This
feature also reduces the VTT output capacitance
requirement down to 1µF, though load-transient
response can still require higher capacitance values
between 10µF and 20µF.
The reference buffer sources and sinks ±3mA, generating
a reference rail for use in the memory controller and
memory devices.
16 ______________________________________________________________________________________

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