M58BV016DB7T3FT 查看數據表（PDF） - Micron Technology

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M58BV016DB7T3FT

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Micron Technology 

M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB

Figure 24. Block erase flowchart and pseudocode

Start

Flowcharts

Write 20h

Write Block Address

& D0h

Erase Command:

– write 20h

– write Block Address

(A11-A18) & D0h

(memory enters read status

state after the Erase command)

Read Status

Register

NO

b7 = 1

NO

Suspend

YES

Suspend

Loop

do:

– read status register

(E or G must be toggled)

if Erase command given execute

suspend erase loop

while b7 = 0

YES

NO

b3 = 0

YES

b4 and b5

=1

NO

YES

NO

b5 = 0

YES

NO

b1 = 0

YES

End

VPP Invalid

Error (1)

Command

Sequence Error

Erase

Error (1)

Erase to Protected

Block Error

If b3 = 1, VPP invalid error:

– error handler

If b4, b5 = 1, Command Sequence error:

– error handler

If b5 = 1, Erase error:

– error handler

If b1 = 1, Erase to Protected Block Error:

– error handler

AI03851b

1. If an error is found, the status register must be cleared before further program/erase operations.

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