L6227Q(2008) 查看數據表（PDF） - STMicroelectronics

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L6227Q
(Rev.:2008)

DMOS dual full bridge driver with PWM current controller

STMicroelectronics 

Electrical characteristics

L6227Q

Table 5. Electrical characteristics (continued) (TA = 25 °C, Vs = 48 V, unless otherwise specified)

Symbol

Parameter

Test condition

Min Typ Max Unit

PWM comparator and monostable

IRCA, IRCB

Voffset

tPROP

tBLANK

tON(MIN)

Source current at pins RCA and RCB

Offset voltage on sense comparator

Turn OFF propagation delay (3)

Internal blanking time on SENSE pins

Minimum on time

tOFF PWM recirculation time

IBIAS

Input bias current at pins VREFA and

VREFB

Over current protection

VRCA = VRCB = 2.5 V

VREFA, VREFB = 0.5 V

ROFF = 20 kΩ; COFF = 1 nF

ROFF = 100 kΩ; COFF = 1 nF

3.5 5.5

mA

±5

mV

500

ns

1

µs

2.5 3 µs

13

µs

61

µs

10 µA

ISOVER

Input supply overcurrent protection

threshold

TJ = -25 °C to 125 °C (1)

2.8

A

ROPDR

tOCD(ON)

tOCD(OFF)

Open drain ON resistance

OCD turn-on delay time (4)

OCD turn-off delay time (4)

I = 4 mA

I = 4 mA; CEN < 100 pF

I = 4 mA; CEN < 100 pF

40 60 Ω

200

ns

100

ns

1. Tested at 25 °C in a restricted range and guaranteed by characterization.

2. See Figure 3 on page 9

3. Measured applying a voltage of 1 V to pin SENSE and a voltage drop from 2 V to 0 V to pin VREF.

4. See Figure 4 on page 9

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