C3552-R 查看數據表（PDF） - Fairchild Semiconductor

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C3552-R

NPN Silicon Transistor

Fairchild Semiconductor 

KSC3552

High Voltage and High Reliabilty

• High Speed Switching

• Wide SOA

NPN Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

ICP

IB

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

Collector Dissipation (TC=25°C)

Junction Temperature

Storage Temperature

1

TO-3P

1.Base 2.Collector 3.Emitter

Value

1100

800

7

12

30

6

150

150

- 55 ~ 150

Units

V

V

V

A

A

A

W

°C

°C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

BVEBO

VCEX(sus)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Sustaining Voltage

IC = 1mA, IE = 0

IC = 5mA, IB = 0

IE = 1mA, IC = 0

IC = 6A, IB1 = -IB2 = 1.2A

L = 500µH, Clamped

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(sat)

Cob

fT

tON

tSTG

tF

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product

Turn ON Time

Storage Time

Fall Time

VCB = 800V, IE = 0

VEB = 5V, IC = 0

VCE = 5V, IC = 0.8A

VCE = 5V, IC = 4A

IC = 6A, IB = 1.2A

IC = 6A, IB = 1.2A

VCB = 10V, f = 1MHz

VCE = 10V, IC = 0.8A

VCC = 400V

51B1 = -2.5I B2 = IC = 8A

RL = 50Ω

Min.

1100

800

7

800

Typ.

Max.

Units

V

V

V

V

10

µA

10

µA

10

40

8

2

V

1.5

V

215

pF

15

MHz

0.5

µs

3

µs

0.3

µs

hFE Classificntion

Classification

hFE

N

10 ~ 20

R

15 ~ 30

O

20 ~ 40

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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