K4S561633F-G 查看數據表（PDF） - Samsung

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K4S561633F-G

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

Samsung 

K4S561633F - X(Z)E/N/G/C/L/F

Mobile-SDRAM

AC OPERATING TEST CONDITIONS(VDD = 2.7V ∼ 3.6V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)

Parameter

Value

Unit

AC input levels (Vih/Vil)

2.4 / 0.4

V

Input timing measurement reference level

0.5 x VDDQ

V

Input rise and fall time

tr/tf = 1/1

ns

Output timing measurement reference level

0.5 x VDDQ

V

Output load condition

See Figure 2

Output

870Ω

VDDQ

1200Ω

VOH (DC) = 2.4V, IOH = -2mA

VOL (DC) = 0.4V, IOL = 2mA

30pF

Output

Figure 1. DC Output Load Circuit

Z0=50Ω

Vtt=0.5 x VDDQ

50Ω

30pF

Figure 2. AC Output Load Circuit

February 2004

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