IXTA200N055T2 查看數據表（PDF） - IXYS CORPORATION

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IXTA200N055T2

DC to DC Synchronous Converter Design

IXYS CORPORATION 

DC to DC Synchronous Converter Design

Abdus Sattar, IXYS Corporation

IXAN0068

I DRIVER( H −L)

=

VDD − VSP

R + R DRIVER( PULL−DOWN )

Gate

= 10 − 3.35 = 1.58A

2.2 + 2

The rise time is, tt(on) = 26nS + 10nS = 36nS

The fall time is, tt(off ) = 18ns + 10nS = 28nS

High-Side MOSFET loss (Q1=IXTA90N055T2):

The conduction loss is,

PCond _ Q1

=

I

2

O

•

RDS (on)

•D

= 122 • 0.0084 • 0.275 = 0.332 = 332mW

The Gate-Charge losses: (assume fs = 200 kHz)

PGC _ Q1 = VGS • Qg • f s = 10.0x42x10−9 x200x103 = 84mW

And estimated switching loss is,

Pt = [VDS (max){I DS (on) • tt (on) + I DS (off ) • tt(off ) } • f s ]

2

= 12 •12 • (36 + 28)x10−9 x200x103 = 0.921W=921mW

2

Total high-side losses: 332mW+84mW+921mW = 1337mW=1.337W

Low-Side MOSFET loss (Q2):

The conduction loss is,

PCond _ Q2

=

I

2

O

• RDS (on)

• (1 −

D)

= 122 • 0.0084 • 0.725 = 0.877W = 877mW

The Gate-Charge loss:

PGC _ Q1 = VGS • Qg • f s = 10.0x42x10−9 x200x103 = 84mW

Total low-side losses: 877mW+84mW =961mW

ISL6594D Driver loss:

From datasheet: VDD = 5V

Table 6: IXS839 Driver Output Stage from datasheet

Driver pull up resistance

RDRIVER(PULL_UP)

3.0 Ω

Driver pull down resistance RDRIVER(PULL_DOWN) 2.2 Ω

Driver gate resistance

RGATE

2Ω

9

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