ISL9V5036S3S(2002) 查看數據表（PDF） - Fairchild Semiconductor
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ISL9V5036S3S Datasheet PDF : 8 Pages
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Typical Characteristics (Continued)
50
VGE = 8.0V
VGE = 5.0V
40 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
TJ = 175°C
0
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
50
VGE = 4.0V
40
30
20
10
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
1000
VECS = 24V
100
VCES = 300V
10
VCES = 250V
1
0.1
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
50
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
40
30
TJ = 175°C
20
TJ = 25°C
10
TJ = -40°C
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
VCE = VGE
2.0
ICE = 1mA
1.8
1.6
1.4
1.2
1.0
-50 -25 0 25 50 75 100 125 150 175
TJ JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage vs Junction
Temperature
20
ICE = 6.5A, VGE = 5V, RG = 1KΩ
18
Resistive tOFF
16
14
Inductive tOFF
12
10
8
6
Resistive tON
4
2
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
©2002 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002
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