IRS2158D(S)
Electrical Characteristics (cont’d)
VCC = VBS = VBIAS=14V +/- 0.25V, CLO = CHO = 1000pF, CT = 1000pF, RFMIN = 15kΩ,
VCPH = VVCO = 0V, VSD/EOL = 0V, VCS = 0V, TA=25 °C unless otherwise specified.
Gate Driver Output Characteristics (HO, LO)
VOL Low-Level Output Voltage
VOH
High-Level Output Voltage
tr
Turn-On Rise Time
tf
Turn-Off Fall Time
---
0 100
IO = 0
---
0
100
mV VBIAS - VO , IO = 0
--- 120 180
--- 50 100
ns CHO=CLO= 1nF
I0+
Source Current
I0-
Sink Current
--- 180 ---
mA
--- 260 ---
Bootstrap FET Characteristics
VBON
VB when the bootstrap FET is on
IBCAP
VB source current when FET is on
IB10V
VB source current when FET is on
Op Amp Characteristics
Iib
Vio
IOUT+
IOUT-
Vic
NINV and INV pin Input bias current
Input Offset Voltage
OUT pin Sink Output Current
OUT pin Source Output Current
Common Mode Input Range
13.7 14.0 ---
30 55 ---
8
12 ---
V
mA VB = COM
VB=10V
--- --- 0.1 µA
-10
0
10 mV
--- 12 ---
INV=7V, NINV=0V
mA
--- 14 ---
INV=7V, NINV=14V
0
--- 11.5 V
Unity Gain BW Operational Amplifier Band Width
GDC DC Open Loop Gain
--- 2.0 --- MHz Guaranteed By
--- 110 ---
dB Design
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